Impact of device geometry at different ambient temperatures on the self-heating of GaN-based HEMTs

被引：10

作者：

Martin-Horcajo, S. ^{[1
,2
]}

Wang, A. ^{[1
,2
]}

Romero, M. F. ^{[1
,2
]}

Tadjer, M. J. ^{[3
]}

Koehler, A. D. ^{[3
]}

Anderson, T. J. ^{[3
]}

Calle, F. ^{[1
,2
]}

机构：

[1] Univ Politecn Madrid, ETSI Telecomunicac, Dept Ingn Elect, E-28040 Madrid, Spain

[2] Univ Politecn Madrid, ETSI Telecomunicac, Inst Sistemas Optoelect & Microtecnol, E-28040 Madrid, Spain

[3] US Navy, Res Lab, Washington, DC 20375 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2014年 / 29卷 / 11期

关键词：

GaN-based HEMTs; self-heating; gate width; gate length; distance between gate and rain; channel temperature; thermal resistance; CHANNEL TEMPERATURE; THERMAL-RESISTANCE; ALGAN/GAN HEMTS; BIAS;

D O I：

10.1088/0268-1242/29/11/115013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of the device geometry on the self-heating for GaN-based HEMTs was assessed at different ambient temperatures, from 25 degrees C to 175 degrees C. The results showed that the gate width can significantly affect the heat dissipation. In addition to this, the distribution of the generated heat in the channel has been demonstrated to be dependent on the distance between the gate and drain contacts. Besides the device geometry, the ambient temperature was also found to be relevant for the thermal resistance, mainly due to the temperature-dependent thermal conductivity of the layers and the substrate. The channel temperature and the thermal resistance extracted from the measurements were in good agreement with the simulations.

引用

页数：9

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