InGaAs-Capped InAs-GaAs Quantum-Dot Infrared Photodetectors Operating in the Long-Wavelength Infrared Range

被引：14
|
作者：
Lin, Wei-Hsun [1 ]
Tseng, Chi-Che [2 ]
Chao, Kuang-Ping [1 ]
Mai, Shu-Cheng [1 ]
Lin, Shih-Yen [3 ,4 ,5 ]
Wu, Meng-Chyi [1 ]
机构：
[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan
[2] Natl Tsing Hua Univ, Inst Photo Technol, Hsinchu 300, Taiwan
[3] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan
[4] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan
[5] Natl Taiwan Ocean Univ, Inst Optoelect Sci, Chilung 20224, Taiwan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2009年 / 21卷 / 18期
关键词：
Quantum-dot infrared photodetectors (QDIPs); HIGH-TEMPERATURE OPERATION;
D O I：
10.1109/LPT.2009.2026630
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A ten-period InAs-GaAs quantum-dot infrared photodetector (QDIP) with 8-nm In0.15Ga0.85 As capping layer grown after quantum-dot (QD) deposition is investigated. With reduced InAs QD coverage down to 2.0 mono-layers, responses at 10.4 and 8.4 mu m are observed for the device under positive and negative biases, respectively. The phenomenon is attributed to the large Stark effect resulted from the asymmetric band diagrams of the device under different voltage polarities. The demonstration of long-wavelength infrared detections with the simple structures of the InGaAs-capped QDIP is advantageous for the development of multicolor QDIP focal-plane arrays.
引用
收藏
页码：1332 / 1334
页数：3
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