Long-Wavelength GaInNAs Vertical-Cavity Surface-Emitting Laser With Buried Tunnel Junction

被引：19

作者：

Onishi, Yutaka ^{[1
]}

Saga, Nobuhiro ^{[2
]}

Koyama, Kenji ^{[1
]}

Doi, Hideyuki ^{[2
]}

Ishizuka, Takashi ^{[2
]}

Yamada, Takashi ^{[1
]}

Fujii, Kosuke ^{[1
]}

Mori, Hiroki ^{[2
]}

Hashimoto, Jun-ichi ^{[1
]}

Shimazu, Mitsuru ^{[2
]}

Yamaguchi, Akira ^{[2
]}

Katsuyama, Tsukuru ^{[1
]}

机构：

[1] Sumitomo Elect Ind Ltd, Transmiss Devices R&D Labs, Yokohama, Kanagawa 2448588, Japan

[2] Sumitomo Elect Ind Ltd, Semicond Technol R&D Labs, Itami, Hyogo 6640016, Japan

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2009年 / 15卷 / 03期

关键词：

GaInNAs; long wavelength (LW); tunnel junction; vertical-cavity surface-emitting laser (VCSEL); RESISTANCE; OPERATION; INP;

D O I：

10.1109/JSTQE.2008.2011495

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A long-wavelength GaInNAs vertical-cavity surface-emitting laser with a buried tunnel junction (BTJ) has been demonstrated in this paper. It has been shown that a combination of a GaAs-based BTJ for a current confinement, GaInNAs multi-quantum wells for an active region, a dielectric distributed Bragg reflector (DBR) for a top mirror, and an AlGaAs/GaAs DBR for a bottom mirror is desirable to realize high-speed operation at high temperature. The maximum output power of 4.2 mW with a low resistance of 65 Omega has been obtained at 25 degrees C. Operations of 10 Gb/s have been achieved over the temperature range of 25 degrees C-85 degrees C, with operation current of 6.9 mA and extinction ratio of 5.0 dB.

引用

页码：838 / 843

页数：6

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