Highly efficient and concentration-insensitive organic light-emitting devices based on self-quenching-resistant orange-red iridium complex

被引:7
|
作者
Qi, Yige [1 ]
Wang, Xu [1 ]
Li, Ming [2 ]
Lu, Zhiyun [2 ]
Yu, Junsheng [1 ]
机构
[1] Univ Elect Sci & Technol China, Sch Optoelect Informat, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
[2] Sichuan Univ, Coll Chem, Chengdu 610064, Peoples R China
基金
美国国家科学基金会;
关键词
Phosphorescent organic light-emitting device; Orange-red iridium complex; Concentration-insensitive; Self-quenching-resistant; Direct-exciton-formation mechanism; QUANTUM EFFICIENCY; DIODES; BLUE; PHOSPHORESCENCE; EMISSION; EXCITONS; PHOLEDS; OLEDS;
D O I
10.1016/j.jlumin.2014.06.025
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Orange-red phosphorescent organic light-emitting devices (PHOLEDs) with high efficiency and concentration insensitivity based on a novel iridium complex, bis[2-(biphenyl-4-yl)benzothiazole-N, C-2']iridium(III) (acetylacetonate) [(4Phbt)(2)Ir(acac)], were fabricated. With the heavily doped emissive layer (EML) of 4,4'-N,N'-dicarbazolyibiphenyl (CBP): (4Phbt)(2)Ir(acac) in a wide and easily controlled dopant concentration range from 12 wt% to 24 wt%, a maximum power efficiency of 29 lm/W and an external quantum efficiency of > 16% of the PHOLEDs were obtained, implying the insensitivity of electroluminescence (EL) properties to doping concentration. Meanwhile, a maximum power efficiency of 5.0 lm/W was achieved from a non-doped device with neat (4Phbt)(2)Ir(acac) as the EML, indicating a superior property of self-quenching resistance. The mechanism of direct exciton formation, in which exciton-formation regions are distributed throughout the EML, is responsible for the significant alleviation of triplet-triplet annihilation and superior EL performance. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:47 / 51
页数:5
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