Research of Silver Sintering Process and Reliability for High Temperature Operation of SiC Power Devices

被引：0
|
作者：
Zhang, Z. [1 ]
Hanada, T. [1 ]
Nakamura, T. [1 ]
机构：
[1] ROHM Co Ltd, Kyoto, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷
关键词：
silver paste; sintering; die attachment;
D O I：
10.4028/www.scientific.net/MSF.778-780.1114
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
In order to take full advantage of the high power density available by the packaging of SiC devices, this group has been exploring die attachment methods based on the sintering of silver particles between the device and silver-plated Cu substrates with void free results. We have also extended this capability from not only attaching single chips assembled in TO-247 packages but also to multiple chips attached at once on a copper substrate. This multi-chip processing capability will aid in further development of SiC power modules.
引用
收藏
页码：1114 / 1117
页数：4
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