SiGe nanorings by ultrahigh vacuum chemical vapor deposition

被引：13

作者：

Lee, C. -H. ^{[1
,2
]}

Shen, Y. -Y. ^{[1
,2
]}

Liu, C. W. ^{[1
,2
,3
]}

Lee, S. W. ^{[4
]}

Lin, B. -H. ^{[5
,6
,7
]}

Hsu, C. -H. ^{[5
,6
,7
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan

[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan

[3] Natl Nano Device Labs, Hsinchu 300, Taiwan

[4] Natl Cent Univ, Inst Mat Sci & Engn, Jhongli 32001, Taiwan

[5] Natl Synchrotron Radiat Res Ctr, Hsinchu 300, Taiwan

[6] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[7] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 14期

关键词：

annealing; chemical vapour deposition; diffusion; Ge-Si alloys; nanofabrication; Raman spectra; semiconductor growth; semiconductor materials; semiconductor quantum dots; silicon; X-ray diffraction; MOLECULAR-BEAM EPITAXY; GE; SURFACE; RINGS;

D O I：

10.1063/1.3116619

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Formation of SiGe nanorings from Si capped Si0.1Ge0.9 quantum dots (QDs) grown at 500 degrees C by ultrahigh vacuum chemical vapor deposition was investigated. SiGe nanorings have average diameter, width, and depth of 185, 30, and 9 nm, respectively. Based on both Raman and x-ray diffraction results, the formation of SiGe nanorings can be attributed to Ge outdiffusion from central SiGe QDs during in situ annealing. Moreover, the depth of SiGe nanorings can be controlled by Si cap thickness. The Si cap is essential for nanorings formation.

引用

页数：3

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