Influence of different seed materials on multi-crystalline silicon ingot properties

被引:19
|
作者
Reimann, C. [1 ,2 ]
Trempa, M. [1 ]
Lehmann, T. [2 ]
Rosshirt, K. [1 ]
Stenzenberger, J. [3 ]
Friedrich, J. [1 ,2 ]
Hesse, K. [3 ]
Dornberger, E. [3 ]
机构
[1] Fraunhofer Inst Integrated Syst & Device Technol, D-91058 Erlangen, Germany
[2] Fraunhofer THM, D-09599 Freiberg, Germany
[3] Wacker Chem AG, D-84489 Burghausen, Germany
关键词
Directional solidification; Nucleation; Characterization; Seed crystals; Semiconducting silicon; Solar cells; GROWTH;
D O I
10.1016/j.jcrysgro.2015.10.024
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Different silicon feedstock materials, Single Crystalline Crushed (SCS), Fluidized-Bed-Reactor (FBR) and Siemens (SIE) feedstock, were used as seeding layer for growing cylindrical shaped, high performance multi-crystalline ingots with a weight of 1.2 kg. Within the investigations a systematic variation of the particle size of the seeding material in the range of <1 mm up to 15 mm was performed. Grain size, grain orientation, and grain boundary type were evaluated at different ingot heights. These results show clearly, that the microstructure size, respectively the particle size for the crushed single crystalline material, determines the resulting grain structure in the ingot near the seeding position. If the microstructure size is equal to the particle size, as it is the case for the SCS material, the particle size has a significant influence on grain size, grain orientation, and grain boundary distribution. With increasing average particle size of the SCS seed material the grain size increases, the grain orientation distribution becomes less uniform, and the random grain boundary length fraction decreases. If the microstructure size is smaller than the particle size, as it is the case for FBR and SIE feedstock materials, the particle size has no influence on the initial grain structure of the ingot. For FBR and SIE seeding material, small grains, with a homogeneous orientation distribution and a high random grain boundary length fraction are obtained. Therefore, all FBR and all SIE seeding materials, as well as the SCS with particle size <1 mm, show lowest fractions of defected areas at about the same level which were determined by etch pit analysis. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:88 / 95
页数:8
相关论文
共 50 条
  • [41] Impact of thermal processes on multi-crystalline silicon
    Kim, Moonyong
    Hamer, Phillip
    Li, Hongzhao
    Payne, David
    Wenham, Stuart
    Abbott, Malcolm
    Hallam, Brett
    FRONTIERS IN ENERGY, 2017, 11 (01) : 32 - 41
  • [42] Influence of surfactant addition for the texture etching process on multi-crystalline silicon wafer
    Tsai, Chien-Chung
    Jan, Hsin-Ru
    Huang, Chi-Han
    JOURNAL OF THE CHINESE INSTITUTE OF ENGINEERS, 2012, 35 (01) : 69 - 77
  • [43] Investigation on influence of dimensionless numbers in molten silicon during multi-crystalline silicon growth process
    Srinivasan, M.
    Ramasamy, P.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2016, 18 (3-4): : 315 - 321
  • [44] Influence of germanium doping on the performance of high-performance multi-crystalline silicon
    Su, Jie
    Zhong, Genxiang
    Zhang, Zhaoyu
    Zhou, Xucheng
    Huang, Xinming
    JOURNAL OF CRYSTAL GROWTH, 2015, 416 : 57 - 61
  • [45] Seed-assisted growth of high-quality multi-crystalline silicon in directional solidification
    Zhu, Didi
    Ming, Liang
    Huang, Meiling
    Zhang, Zhaoyu
    Huang, Xinming
    JOURNAL OF CRYSTAL GROWTH, 2014, 386 : 52 - 56
  • [46] Study of Porous Silicon Layer Effect in Optoelectronics Properties of Multi-Crystalline Silicon for Photovoltaic Applications
    Mohammed A. Almeshaal
    Bilel Abdouli
    Karim Choubani
    Lotfi Khezami
    Mohamed Ben Rabha
    Silicon, 2023, 15 : 6025 - 6032
  • [47] Characterization of near-surface electrical properties of multi-crystalline silicon wafers
    Drummond, P.
    Kshirsagar, A.
    Ruzyllo, J.
    SOLID-STATE ELECTRONICS, 2011, 55 (01) : 29 - 36
  • [48] Study of Porous Silicon Layer Effect in Optoelectronics Properties of Multi-Crystalline Silicon for Photovoltaic Applications
    Almeshaal, Mohammed A. A.
    Abdouli, Bilel
    Choubani, Karim
    Khezami, Lotfi
    Rabha, Mohamed Ben
    SILICON, 2023, 15 (14) : 6025 - 6032
  • [49] Light induced degradation in promising multi-crystalline silicon materials for solar cell fabrication
    Damiani, B., World Conference on Photovoltaic Energy Conference,WCPEC (World Conference on Photovoltaic Energy Conference (WCPEC)):
  • [50] 3D numerical study of coupled crystallization and carbon segregation during multi-crystalline silicon ingot solidification
    Dezfoli, Amir Reza Ansari
    Hwang, Weng-Sing
    Shukur, Anmar Khalid
    Augusto, James
    Huang, Yu Shan
    Tzeng, ShiKai
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 59 : 76 - 86