A highly efficient UV photodetector based on a ZnO microwire p-n homojunction

被引：52

作者：

Shi, Linlin ^{[1
,2
]}

Wang, Fei ^{[1
,2
]}

Li, Binghui ^{[1
]}

Chen, Xing ^{[1
]}

Yao, Bin ^{[3
]}

Zhao, Dongxu ^{[1
]}

Shen, Dezhen ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China

[2] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China

[3] Jilin Univ, Dept Phys, Changchun 130023, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2014年 / 2卷 / 25期

基金：

美国国家科学基金会;

关键词：

ULTRAVIOLET PHOTODETECTORS; NANOWIRE; FILMS; BOUNDARIES; NANOBELTS; EPITAXY; DEVICES; ARRAY;

D O I：

10.1039/c3tc32547d

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A highly efficient ultraviolet photodetector was successfully obtained based on a Sb-doped p-type ZnO microwire p-n homojunction which consisted of a single Sb-doped p-type ZnO microwire and a single undoped ZnO microwire. The ultralong Sb-doped ZnO single crystalline microwires were synthesized via a chemical vapor deposition method. The ZnO microwire homojunction showed well-defined rectification characteristics, which indicated the p-type conductivity of the Sb-doped ZnO microwire. An ultraviolet photodetector with an external quantum efficiency of 64.5% was obtained based on the ZnO microwire p-n homojunction. The photodetector showed high wavelength selectivity with a full width at half maximum of 6 nm for the photoresponse peak located at 386 nm.

引用

页码：5005 / 5010

页数：6

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