AES study on the interface diffusion and reaction between Cr layer and Si3N4/Si substrate

A Cr layer of thickness 190 nm was successfully deposited on the surface of Si3N4/Si substrate using magnetron sputtering in d.c. mode. Auger electron spectroscopy analysis indicated that the interface diffusion was very weak during the deposition. Annealing treatments in the temperature range 300-760 degreesC in high vacuum were performed in order to promote interface diffusion and reaction between the Cr layer and the Si3N4/Si substrate. Auger electron spectroscopy results indicated that the interface diffusion and reaction took place between the Cr layer and the Si3N4 layer to form CrNxSiy species at 600degreesC and was enhanced with increase in temperature. Simultaneously, Si depleted from Si substrate and diffused gradually into the Cr layer through the Si3N4 layer. After the temperature reached 760degreesC, most of the Si3N4 species decomposed and a CrSi layer of similar to210 nm formed, indicating that the annealing temperature was the key step in the interface reaction. Interface diffusion and reaction can be enhanced by increasing the temperature or the annealing time. Copyright (C) 2002 John Wiley Sons, Ltd.