Simulation of the boron build-up formation during melting laser thermal annealing

被引：5

作者：

Hackenberg, M. ^{[1
]}

Huet, K. ^{[2
]}

Negru, R. ^{[2
]}

Fisicaro, G. ^{[3
]}

La Magna, A. ^{[3
]}

Taleb, N. ^{[4
]}

Quillec, M. ^{[4
]}

Pichler, P. ^{[1
,5
]}

机构：

[1] Fraunhofer Inst Integrated Syst & Device Technol, Schottkystr 10, D-91058 Erlangen, Germany

[2] Excico, F-92230 Gennevilliers, France

[3] CNR, IMM, I-95121 Catania, Italy

[4] Probion, F-92220 Bagneux, France

[5] Univ Erlangen Nurnberg, Chair Elect Devices, D-91058 Erlangen, Germany

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 1 | 2014年 / 11卷 / 01期

关键词：

laser thermal annealing; silicon; simulation; boron doping; SILICON; SEGREGATION;

D O I：

10.1002/pssc.201300156

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, we present a model describing the boron redistribution during laser thermal annealing in the melting regime based on the adsorption of boron atoms at the solid-liquid interface. To validate the model, we performed SIMS measurements on silicon samples implanted with boron with an energy of 3 keV and doses of 3x10(13) cm(-2) and 4x10(14) cm(-2) annealed with a XeCl excimer laser with a wavelength of 308 nm, a pulse duration of 160 ns, and up to 10 consecutive pulses. After calibration, our model is able to reproduce the measured profiles for the different process conditions. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：89 / 92

页数：4

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