Investigation of nonstationary transport and quantum effects in realistic deep submicrometerr partially depleted SOI technology

被引：0
|
作者：
Munteanu, D [1 ]
Le Carval, G [1 ]
Fenouillet-Béranger, C [1 ]
Faynot, O [1 ]
机构：
[1] CEA, Lab Electron Technol & Instrumentat, Dept Technol Silicum, F-38054 Grenoble 9, France
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2002年 / 5卷 / 05期
关键词：
D O I：
10.1149/1.1462878
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The impact of nonstationary transport and quantum effects on performances of 0.1 mum partially depleted silicon-on-insulator (SOI) technology is investigated by 2D simulation on realistic devices. We analyze quantitatively the technology influence on the needed level for carrier transport modeling and we show which recipes must be used to evaluate performance of current devices. The original point is the investigation of technological parameters impact on injection velocity at source side and on drain current. We conclude that specific engineering of access region must be envisaged for taking full advantage of nonstationary effects on device performance. (C) 2002 The Electrochemical Society.
引用
收藏
页码：G29 / G31
页数：3
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