Conjugated Polyelectrolytes as Efficient Hole Transport Layers in Perovskite Light-Emitting Diodes

被引:64
|
作者
Lee, Bo Ram [1 ,2 ]
Yu, Jae Choul [3 ,4 ]
Park, Jong Hyun [3 ,4 ]
Lee, Seungjin [3 ,4 ]
Mai, Cheng-Kang [5 ]
Zhao, Baodan [2 ]
Wong, Matthew S. [5 ]
Jung, Eui Dae [3 ,4 ]
Nam, Yun Seok [3 ,4 ]
Park, Song Yi [8 ]
Di Nuzzo, Daniele [2 ]
Kim, Jin Young [8 ]
Stranks, Samuel D. [2 ]
Bazan, Guillermo C. [5 ]
Choi, Hyosung [6 ,7 ]
Song, Myoung Hoon [3 ,4 ]
Friend, Richard H. [2 ]
机构
[1] Pukyong Natl Univ, Dept Phys, 45 Yongso Ro, Busan 48513, South Korea
[2] Univ Cambridge, Cavendish Lab, JJ Thomson Ave, Cambridge CB3 0HE, England
[3] UNIST, Sch Mat Sci Engn, UNIST Gil 50, Ulsan 44919, South Korea
[4] UNIST, KIST UNIST Ulsan Ctr Convergent Mat, Low Dimens Carbon Ctr, Perovtron Res Ctr, UNIST Gil 50, Ulsan 44919, South Korea
[5] Univ Calif Santa Barbara, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USA
[6] Hanyang Univ Seoul, Dept Chem, Seoul 04763, South Korea
[7] Hanyang Univ Seoul, Res Inst Nat Sci, Seoul 04763, South Korea
[8] UNIST, Dept Energy Engn, Ulsan 44919, South Korea
基金
英国工程与自然科学研究理事会; 新加坡国家研究基金会;
关键词
perovskite light-emitting diodes (PeLEDs); conjugated polyelectrolytes (CPEs); hole transport layer (HTL); PEDOT:PSS; electroluminescence; LEDs; lead halide perovskites; METAL-HALIDE PEROVSKITES; SOLAR-CELLS; OPTICAL-PROPERTIES; HIGHLY EFFICIENT; HIGH-PERFORMANCE; INTERFACIAL CONTROL; GRAPHENE OXIDE; QUANTUM DOTS; PHOTOLUMINESCENCE; NANOCRYSTALS;
D O I
10.1021/acsnano.8b01715
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Perovskite-based optoelectronic devices have been rapidly developing in the past 5 years. Since the first report, the external quantum efficiency (EQE) of perovskite light-emitting diodes (PeLEDs) has increased rapidly through the control of morphology and structure from 0.1% to more than 11%. Here, we report the use of various conjugated polyelectrolytes (CPEs) as the hole injection layer in PeLEDs. In particular, we find that poly[2,6-(4,4-bis-potassium butanylsulfonate)-4H-cyclopenta-[2,1-b;3,4-b']-dithiophene)] (PCPDT-K) transfers holes effectively, blocks electron transport from the perovskite to the underlying ITO layer, and reduces luminescence quenching at the perovskite/PCPDT-K interface. Our optimized PeLEDs with PCPDT-K show enhanced EQE by a factor of approximately 4 compared to control PeLEDs with PEDOT:PSS, reaching EQE values of 5.66%, and exhibit improved device stability.
引用
收藏
页码:5826 / 5833
页数:8
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