Background-limited long wavelength infrared InAs/InAs1-xSbx type-II superlattice-based photodetectors operating at 110 K

We report the demonstration of high-performance long-wavelength infrared (LWIR) nBn photodetectors based on InAs/InAs1-xSbx type-II superlattices. A new saw-tooth superlattice design was used to implement the electron barrier of the photodetectors. The device exhibited a cut-off wavelength of similar to 10 mu m at 77 K. The photodetector exhibited a peak responsivity of 2.65 A/W, corresponding to a quantum efficiency of 43%. With an R x A of 664 Omega.cm(2) and a dark current density of 8 x 10(-5) A/cm(2), under -80 mV bias voltage at 77 K, the photodetector exhibited a specific detectivity of 4.72 x 10(11) cm. root Hz/W and a background-limited operating temperature of 110 K. (C) 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution ( CC BY) license