Ab Initio Studies of Hydrogen Defects in CdTe

被引:9
|
作者
Rak, Z. S. [1 ]
Mahanti, S. D. [1 ]
Mandal, Krishna C. [2 ]
机构
[1] Michigan State Univ, Dept Phys & Astron, E Lansing, MI 48824 USA
[2] EIC Labs Inc, Norwood, MA 02062 USA
关键词
Electronic structure; hydrogen in CdTe; defect formation energy; DFT; TOTAL-ENERGY CALCULATIONS; MOLECULAR-DYNAMICS; SEMICONDUCTORS; DIFFUSION; CRYSTALS; CDZNTE;
D O I
10.1007/s11664-009-0751-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Using first-principles calculations based on density functional theory, we have investigated the nature of H defects in CdTe. The formation energy calculations indicate that the ground state position of the H inside the CdTe lattice depends on charge state: the lowest energy position for H-0 and H+ is at the bond center site, while H- prefers the tetrahedral interstitial site with Cd nearest neighbors (T-Cd). We find that H in CdTe acts as an amphoteric impurity. In p-type samples, H is in a positive charge state, acting as a donor to neutralize the free holes in the valence band, and in n-type samples H acquires an electron, compensating the donors in the sample.
引用
收藏
页码:1539 / 1547
页数:9
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