Conductance switching phenomena and H-like aggregates in squarylium-dye Langmuir-Blodgett films

被引：6

作者：

Kushida, M ^{[1
]}

Inomata, H ^{[1
]}

Tanaka, Y ^{[1
]}

Harada, K ^{[1
]}

Saito, K ^{[1
]}

Sugita, K ^{[1
]}

机构：

[1] Chiba Univ, Fac Engn, Dept Mat Technol, Inage Ku, Chiba 2638522, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2002年 / 41卷 / 3A期

关键词：

conductance switching; H-aggregates; Langmuir-Blodgett films; squarylium dye;

D O I：

10.1143/JJAP.41.L281

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

dThe current-voltage characteristics of sandwich devices with the structure of top gold electrode/squarylium-dye Langmuir-Blodgett (SQ LB) films/bottom aluminum electrode indicated four kinds of conductivity depending on the evaporation conditions of the top gold electrode, The current densities of two, which showed conductance switching, of the four samples were 30-40 muA/cm(2) and 20-30 mA/cm(2) in the ON state. In the former case. the dependence of conductance switching voltage on the number of SQ LB films and ultraviolet-visible absorption spectra were studied. The results revealed that conductance switching phenomena were induced at the interface between the top gold electrode and SQ LB films, and caused by the presence of H-like aggregates in SQ LB films.

引用

页码：L281 / L283

页数：3

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