Hot electron transport in n-GaAs field emitter at nitrogen temperature

Results of a Monte Carlo study of electron processes in n-GaAs emitter are presented, The simulation of high-field electron transport through the surface region of semiconductor is performed by coupling the Boltzmann to the Poisson solution accounting for the nonparabolic electron spectrum, all relevant scattering processes (phonons. ionized impurities, and impact ionization), and the nonlocal properties of electron transport. It is shown that at nitrogen temperature hot electrons of L valley give the main contribution to the emission current. The variation of the emission process at 78 K with the applied electric field is presented. (C) 1997 American Institute of Physics.