Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

被引：12

作者：

Bosser, A. L. ^{[1
,2
,3
]}

Gupta, V. ^{[4
,5
,6
]}

Javanainen, A. ^{[1
,7
]}

Tsiligiannis, G. ^{[8
]}

LaLumondiere, S. D. ^{[9
]}

Brewe, D. ^{[10
]}

Ferlet-Cavrois, V. ^{[11
]}

Puchner, H. ^{[12
]}

Kettunen, H. ^{[1
]}

Gil, T. ^{[2
]}

Wrobel, F. ^{[13
]}

Saigne, F. ^{[13
]}

Virtanen, A. ^{[1
]}

Dilillo, L. ^{[2
]}

机构：

[1] Univ Jyvaskyla, Dept Phys, Jyvaskyla 40014, Finland

[2] Univ Montpellier, CNRS, Lab Informat Robot & Microelect Montpellier, F-34095 Montpellier, France

[3] Aalto Univ, Dept Elect & Nanoengn, FL-00076 Espoo, Finland

[4] Inst Elect Sud, Lab Informat Robot & Microelect Montipiller, F-34095 Montpellier, France

[5] CALTECH, Jet Prop Lab, Pasadena, CA 91101 USA

[6] ESA ESEC, Redu Space Serv, B-6890 Redu, Belgium

[7] Vanderbilt Univ, Elect Engn & Comp Sci Dept, 221 Kirkland Hall, Nashville, TN 37235 USA

[8] CERN, CH-1211 Geneva, Switzerland

[9] Aerosp Corp, Photon Technol Dept, Phys Sci Labs, Elect & Photon Lab, POB 92957, Los Angeles, CA 90009 USA

[10] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA

[11] ESA ESTEC, NL-2200 AG Noordwijk, Netherlands

[12] Cypress Semicond Technol Res & Dev, San Jose, CA 95134 USA

[13] Univ Montpellier, CNRS, Inst Electron Sud, UMR, F-34095 Montpellier, France

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2018年 / 65卷 / 08期

基金：

芬兰科学院;

关键词：

Dynamic test; ferroelectric random access memory (FRAM); heavy ion; single-event effect (SEE); single-event functional interrupt (SEFI); single-event upset; static test; X-ray; TECHNOLOGIES; SRAMS;

D O I：

10.1109/TNS.2018.2797543

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. The underlying mechanisms are discussed.

引用

页码：1708 / 1714

页数：7

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