Power Schottky and p-n diodes on SiC epi-wafers with reduced micropipe density

In this paper we report on 2 mm diameter diodes fabricated with high device yield on 2 inch 4H-SiC wafers with reduced micropipe density (RMD). Micropipe density in 4H-SiC wafers was reduced using micropipe-filling technique. Low doped n-type layers were grown on RMD substrates by chemical vapor deposition (CVD). Schottky diodes were formed by Ni evaporation on CVD grown layers. Pn diodes were formed by sublimation growth of p(+)-layer on CVD grown layer. Mesa edge termination and no edge termination were used for pn diodes and Schottky diodes respectively. Both types of diodes demonstrated a maximum breakdown voltage of about 1000 V.