Single crystal growth of GaN by the temperature gradient Na flux method

被引：23
|
作者：
Aoki, M
Yamane, H
Shimada, M
Sarayama, S
Iwata, H
DiSalvo, FJ
机构：
[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808578, Japan
[2] Tohoku Univ, Interdisciplinary Res Ctr, Aoba Ku, Sendai, Miyagi 9808578, Japan
[3] Ricoh Co Ltd, Res & Dev Grp, R&D Ctr, Dept 1, Takadate, Natori 9811241, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2004年 / 266卷 / 04期
基金：
日本学术振兴会;
关键词：
growth from solutions; single crystal growth; gallium compounds; nitrides; semiconducting III-V materials;
D O I：
10.1016/j.jcrysgro.2004.03.035
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
GaN single crystals were grown in Na or Na-Ga melts with different addition of Li3N by recrystallization under temperature gradient conditions (730-800degreesC). Colorless transparent platelet single crystals having a size of about 2 mm grew after 100h in some Na-Ga melts containing Li3N. The full-width at half-maximum of X-ray rocking curves measured for the (0 0 0 2) reflection of the crystals was 40-60 arcsec, showing that the crystals have a good quality. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：461 / 466
页数：6
相关论文
共 50 条
  • [41] Effects of Growth Temperature on Morphology of GaN Crystals by Na Flux Liquid Phase Epitaxial Method
    Hangfei Hao
    Xi Wu
    Zhenrong Li
    Shiji Fan
    Journal of Electronic Materials, 2019, 48 : 3570 - 3578
  • [42] Growth of GaN single crystals by a Ca- and Ba-added Na flux method
    Ukegawa, H.
    Konishi, Y.
    Fujimori, T.
    Miyoshi, N.
    Imade, M.
    Yoshimura, M.
    Kitaoka, Y.
    Sasaki, T.
    Mori, Y.
    GALLIUM NITRIDE MATERIALS AND DEVICES VI, 2011, 7939
  • [43] Effects of Growth Temperature on Morphology of GaN Crystals by Na Flux Liquid Phase Epitaxial Method
    Hao, Hangfei
    Wu, Xi
    Li, Zhenrong
    Fan, Shiji
    JOURNAL OF ELECTRONIC MATERIALS, 2019, 48 (06) : 3570 - 3578
  • [44] A Systematic study on the growth of GaN single crystals using the Na-based flux method
    Kawahara, M
    Yamada, Y
    Umeda, H
    Morishita, M
    Kawamura, F
    Yoshimura, M
    Mori, Y
    Sasaki, T
    JOURNAL OF CERAMIC PROCESSING RESEARCH, 2005, 6 (02): : 146 - 152
  • [45] Influence of Na : Ga ratios under the flux-excess aid on GaN crystal growth using the Na-flux LPE method
    Yang, Chen
    Huang, Gemeng
    Pan, Ronglin
    Wang, Ziyou
    Ma, Ming
    Xia, Song
    Zhou, Mingbin
    Fan, Shiji
    Li, Zhenrong
    CRYSTENGCOMM, 2025, 27 (03) : 400 - 406
  • [46] Growth of bulk GaN single crystals by flux method
    Chen, XL
    SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2005, 6 (07) : 766 - 771
  • [47] Investigation of oxygen impurity in different growth zones of GaN crystal grown by Na-flux method
    Gu, Hong
    Liu, Zongliang
    Dong, Xiaoming
    Gao, Xiaodong
    Tian, Feifei
    Wang, Jianfeng
    Xu, Ke
    JOURNAL OF CRYSTAL GROWTH, 2020, 544
  • [48] Analysis of GaN crystal growth mechanism in liquid-phase epitaxial Na-flux method
    Huang, Gemeng
    Hao, Hangfei
    Yang, Chen
    Ma, Ming
    Xia, Song
    Fan, Shiji
    Li, Zhenrong
    JOURNAL OF MATERIALS SCIENCE, 2024, 59 (17) : 7318 - 7331
  • [49] Single crystal growth of LaCuOS by the flux method
    Nakachi, Yutaka
    Ueda, Kazushige
    JOURNAL OF CRYSTAL GROWTH, 2008, 311 (01) : 114 - 117
  • [50] Morphology and polarity of GaN single crystals synthesized by the Na flux method
    Aoki, M
    Yamane, H
    Shimada, M
    Kajiwara, T
    Sarayama, S
    DiSalvo, FJ
    CRYSTAL GROWTH & DESIGN, 2002, 2 (01) : 55 - 58
12345