Transport properties of the Cu2ZnSnS4 bulk systems: Effects of nonstoichiometry and defect formation

被引：21

作者：

Hazama, Hirofumi ^{[1
]}

Tajima, Shin ^{[1
]}

Masuoka, Yumi ^{[1
]}

Asahi, Ryoji ^{[1
]}

机构：

[1] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 4801192, Japan

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2016年 / 657卷

关键词：

Cu2ZnSnS4 (CZTS) semiconductor; Defect; Electrical transport; Sintering; SOLAR-CELL; THIN-FILMS; J-PARC;

D O I：

10.1016/j.jallcom.2015.10.032

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have synthesized Cu2ZnSnS4 (CZTS) sintered compacts with different compositions and investigated their transport properties to understand effects of nonstoichiometry and defects. The synthesized Cu2ZnSnS4, whose nominal molar ratios were stoichiometric, was a p-type semiconductor and had a low carrier mobility of 0.09 cm(2)/Vs with a carrier concentration of 5 x 10(18)/cm(3) at room temperature. The carrier mobility increased by lowering the carrier concentration when the Zn or Sn content of CZTS increased. It probably originates in reducing antisite defects at Zn and/or Sn site, which generate hole carriers and scattering centers of carriers. (C) 2015 Elsevier B. V. All rights reserved.

引用

页码：179 / 183

页数：5

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