Universal linear density of states for tunneling into the two-dimensional electron gas in a magnetic field

被引:43
|
作者
Chan, HB [1 ]
Glicofridis, PI [1 ]
Ashoori, RC [1 ]
Melloch, MR [1 ]
机构
[1] PURDUE UNIV,DEPT ELECT ENGN,W LAFAYETTE,IN 47907
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevLett.79.2867
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have developed a technique capable of measuring the tunneling current into both localized and conducting states in a 2D electron system. I-V characteristics for tunneling are obtained with no distortions arising from low 2D in-plane conductivity. In a perpendicular magnetic field, a pseudogap develops in the tunneling density of states at the Fermi energy. We resolve a linear energy dependence of this pseudogap at low excitations. The slopes of this linear gap are strongly field dependent. The data are suggestive of a new model of the gap in the presence of disorder and external screening.
引用
收藏
页码:2867 / 2870
页数:4
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