Effect of gate oxide breakdown on RF noise of deep submicron NMOSFETs

被引：0

作者：

Zeng, Rong ^{[1
]}

Wang, Hong ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Ctr Microelect, Singapore 639798, Singapore

来源：

2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5 | 2005年

关键词：

RF MOSFETs; dielectric breakdown; microwave noise;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Degradation of high frequency noise characteristics in 0.18 m NMOSFET induced by gate oxide breakdown has been characterized in the frequency range of 2 to 14 GHz. A serous degradation of microwave noise performance has been observed. The degradation mechanisms are analyzed by extraction of the channel and gate noise using a noise equivalent circuit model. It has been found that, gate shot noise, which is commonly ignored in the as-processed NMOSFET, plays a dominant role in determining the microwave noise performance in the post-oxide breakdown NMOSFET.

引用

页码：1116 / 1118

页数：3

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