50 GBit/s Photodetectors Based on Wafer-Scale Graphene for Integrated Silicon Photonic Communication Systems

被引：170

作者：

Schall, Daniel ^{[1
]}

Neumaier, Daniel ^{[1
]}

Mohsin, Muhammad ^{[1
]}

Chmielak, Bartos ^{[1
]}

Bolten, Jens ^{[1
]}

Porschatis, Caroline ^{[1
]}

Prinzen, Andreas ^{[1
]}

Matheisen, Christopher ^{[1
]}

Kuebart, Wolfgang ^{[2
]}

Junginger, Bernhard ^{[2
]}

Templ, Wolfgang ^{[2
]}

Giesecke, Anna Lena ^{[1
]}

Kurz, Heinrich ^{[1
]}

机构：

[1] AMO GmbH, Adv Microelect Ctr Aachen AMICA, D-52074 Aachen, Germany

[2] Alcatel Lucent Deutschland AG, Bell Labs, D-70435 Stuttgart, Germany

来源：

ACS PHOTONICS | 2014年 / 1卷 / 09期

关键词：

graphene; photodetector; silicon photonic; dark current; data communication; high frequency;

D O I：

10.1021/ph5001605

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Optical data links are the backbone of today's telecommunication infrastructure. The integration of electronic and optic components on one chip is one of the most attractive routes to further increase the system performance. Here, we present the fabrication of photodetectors based on CVD-grown graphene on silicon photonic waveguides. The devices operate bias-free in the C-band at 1550 nm and show an extrinsic -3 dB bandwidth of 41 GHz. We demonstrate that these detectors work at data rates up to 50 GBit/s with excellent signal integrity.

引用

页码：781 / 784

页数：4

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