Power and thermal design criteria of AlGaN/GaN cascode cell for wideband distributed power amplifier

被引：0
|
作者：
Martin, A. [1 ]
Reveyrand, T. [1 ]
Campovecchio, M. [1 ]
Quere, R. [1 ]
Jardel, O. [2 ]
Piotrowicz, S. [2 ]
机构：
[1] XLIM MITIC, CNRS, UMR 6172, Limoges, France
[2] MITIC, Alcatel Thales III V lab, Marcoussis, France
来源：
2008 WORKSHOP ON INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE- WAVE CIRCUITS (INMMIC) | 2008年
关键词：
AlGaN/GaN HEMT modelling; balanced cascode cell; flip-chip; gallium nitride;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper deals with non-linear modeling of power GaN HEMT and design of power balanced cascode cell for wideband distributed power amplifiers. The active device is a 8x50 mu m AlGaN/GaN HEMT grown on SiC substrate. The cascode die is flip-chipped onto an AlN substrate via electrical and mechanical bumps. This GaN-based cascode cell is dedicated to act as the unit power device within a broad-band capacitively-coupled 4-18GHz distributed amplifier.
引用
收藏
页码：127 / +
页数：2
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