Insulating phases induced by crossing of partially filled Landau levels in a Si quantum well

被引：2

作者：

Okamoto, Tohru ^{[1
]}

Sasaki, Kohei ^{[1
]}

Toyama, Kiyohiko ^{[1
]}

Masutomi, Ryuichi ^{[1
]}

Sawano, Kentarou ^{[2
]}

Shiraki, Yasuhiro ^{[2
]}

机构：

[1] Univ Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan

[2] Tokyo City Univ, Adv Res Labs, Res Ctr Silicon Nanosci, Setagaya Ku, Tokyo 1580082, Japan

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 24期

关键词：

galvanomagnetic effects; Hall effect; Landau levels; magnetic fields; semiconductor quantum wells; silicon; 2-DIMENSIONAL ELECTRON LIQUID; MODULATION-DOPED SYSTEMS; TILTED MAGNETIC-FIELDS; HALL FERROMAGNETS; GROUND-STATE; SI/SIGE; TRANSITIONS; ANISOTROPY; TRANSPORT; COLLAPSE;

D O I：

10.1103/PhysRevB.79.241302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study magnetotransport in a high-mobility Si two-dimensional electron system by in situ tilting of the sample relative to the magnetic field. A pronounced dip in the longitudinal resistivity is observed during the Landau-level crossing process for noninteger filling factors. Together with a Hall resistivity change which exhibits the particle-hole symmetry, this indicates that electrons or holes in the relevant Landau levels become localized at the coincidence where the pseudospin-unpolarized state is expected to be stable.

引用

页数：4

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