Endurance enhancement of Cu-oxide based resistive switching memory with Al top electrode

被引：62
|
作者：
Lv, Hangbing [1 ,2 ]
Wang, Ming [1 ,2 ]
Wan, Haijun [1 ,2 ]
Song, Yali [1 ,2 ]
Luo, Wenjing [1 ,2 ]
Zhou, Peng [1 ,2 ]
Tang, Tingao [1 ,2 ]
Lin, Yinyin [1 ,2 ]
Huang, R. [3 ]
Song, S. [3 ]
Wu, J. G. [3 ]
Wu, H. M. [3 ]
Chi, M. H. [3 ]
机构：
[1] Fudan Univ, Dept Microelect, ASIC, Shanghai 200433, Peoples R China
[2] Fudan Univ, Syst State Key Lab, Shanghai 200433, Peoples R China
[3] Semicond Mfg Int Corp, Memory Technol Dev Ctr, Shanghai 201203, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 21期
关键词：
aluminium; Auger electron spectra; copper; copper compounds; diffusion; electrical conductivity transitions; electrical resistivity; interface structure; MIM structures; platinum; titanium; transmission electron microscopy; vacancies (crystal); FILMS; THIN;
D O I：
10.1063/1.3142392
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated the switching performance of Cu-oxide films with Al, Pt, and Ti electrodes. Compared with Pt electrode, the Al electrode shows better stability, preferable endurance, and larger resistance ratio. An interface AlOx layer is detected by transmission electron microscopy and Auger electron spectroscopy. This layer can strongly affect the movement of oxygen vacancies. However, the sample with pure Ti electrode almost has no switching characteristics. Ti/TiN electrode with thin Ti exhibits good switching behavior. The thickness control of Ti layer is quite critical. So we suggest that the oxygen diffusion in electrode is another important factor for switching performance.
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页数：3
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