Visualization of Si Surface and Interface Quality by Non-Contact Optical Characterization Techniques

被引：0

作者：

Yoo, Woo Sik ^{[1
]}

Kang, Kitaek ^{[1
]}

Ishigaki, Toshikazu ^{[1
]}

Ueda, Takeshi ^{[1
]}

机构：

[1] WaferMasters Inc, 254 East Gish Rd, San Jose, CA 95112 USA

来源：

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXVIII | 2014年 / 9050卷

关键词：

Raman spectroscopy; photoluminescence (PL); Si stress; Si surface damage; Si interface quality; plasma process induced damage (PPID); virtual depth profiling; ROOM-TEMPERATURE-PHOTOLUMINESCENCE;

D O I：

10.1117/12.2048242

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Si lattice stress at or near the surface, and overall quality of the Si surface and interface were characterized using multiwavelength, high resolution Raman and photoluminescence (PL) spectroscopy. Depth profiling of Si lattice stress and electrically active defects/traps, at or near the Si surface and interface, was done using ultraviolet (UV) to infrared (IR) light sources, with different probing depths. Significant variations in Si lattice stress, Si bond lengths and electrically active defects/traps were found from Si wafers undergoing various process steps. Visualization of Si surface and interface quality was done on Si wafers following various device fabrication steps.

引用

页数：5

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