High performance millimetre-wave amplifiers with dry gate recess etched InP HEMTs

被引：0

作者：

Duran, HC ^{[1
]}

Schefer, M ^{[1
]}

Patrick, W ^{[1
]}

Bachtold, W ^{[1
]}

Beck, M ^{[1
]}

机构：

[1] SWISS FED INST TECHNOL,INST MICRO & OPTOELECTR,CH-1015 LAUSANNE,SWITZERLAND

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 15期

关键词：

microwave amplifiers; high electron mobility transistors;

D O I：

10.1049/el:19960901

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Several millimetre-wave amplifier integrated circuits have been fabricated using methane-hydrogen reactive ion etching (RIE) for definition of the gate recess. Highly uniform device parameters and good microwave and noise performance have been measured. A single stage amplifier yielded a gain of 11.9dB at 62GHz, and a third order input intercept point of 19.5dBm. This demonstrates the suitability of the RIE process for circuit fabrication.

引用

页码：1375 / 1377

页数：3

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