1D physically based non-quasi-static analog behavioral BJT model for SPICE

被引:0
|
作者
Jankovic, N [1 ]
Pesic, T [1 ]
Karamarkovic, J [1 ]
机构
[1] Univ Nish, Fac Elect Engn, YU-18000 Nish, Yugoslavia
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A compact 1D non-quasi-static BJT model (NQS BJT) based on the analog behavioral modeling capabilities of SPICE simulator is described. The NQS BJT model parameters are derived directly from the physical device structure. A momentum relaxation time parameter is also included as equivalent inductivity yielding more accurate prediction of unity gain frequency and phase characteristics. The efficiency of novel NQS model is demonstrated by comparison with standard Gummel-Poon model and experimental results.
引用
收藏
页码:463 / 468
页数:6
相关论文
共 50 条
  • [31] A robust large signal non-quasi-static MOSFET model for circuit simulation
    Wang, H
    Gildenblat, G
    PROCEEDINGS OF THE IEEE 2004 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2004, : 5 - 8
  • [32] Physics Based Modeling of Non-Quasi-Static Effects in SiGe-HBTs
    Jacob, Jobymol
    DasGupta, Amitava
    Chakravorty, Anjan
    2009 2ND INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY, 2009, : 126 - 129
  • [33] Non-quasi-static small signal model of four-terminal MOS transistors
    Nitsu, Y
    IEICE TRANSACTIONS ON ELECTRONICS, 2000, E83C (12) : 1950 - 1960
  • [34] Accurate Non-Quasi-Static Gate-Source Impedance Model of RF MOSFETs
    Lee, Hyun-Jun
    Lee, Seonghearn
    JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2013, 13 (06) : 569 - 575
  • [35] Physics-based, SPICE (Simulation Program with Integrated Circuit Emphasis)-compatible non-quasi-static MOS (metal-oxide-semiconductor) transient model based on the collocation method
    Hwang, Sung Woo
    Yoon, Tae-Woong
    Kwon, Dae Han
    Yu, Yun Seop
    Kim, Ki Hyuk
    Japanese Journal of Applied Physics, Part 2: Letters, 1998, 37 (2 A):
  • [36] A 3-D Table-Based Method for Non-Quasi-Static Microwave FET Devices Modeling
    Long, Yunshen
    Guo, Yong-Xin
    Zhong, Zheng
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2012, 60 (10) : 3088 - 3095
  • [37] Time-domain nonlinear HBT model including non-quasi-static effects
    Ouslimani, A
    Hafdallah, H
    Gaubert, J
    Medjnoun, M
    ELECTRONICS LETTERS, 2000, 36 (17) : 1497 - 1499
  • [38] A COMPREHENSIVE NON-QUASI-STATIC CAPACITANCE MODEL FOR GRADED HETEROJUNCTION BIPOLAR-TRANSISTORS
    HUANG, JCN
    ABDELMOTALEB, IM
    SOLID-STATE ELECTRONICS, 1993, 36 (11) : 1583 - 1592
  • [39] Non-Quasi-Static Nonlinear Model for FinFETs Using Higher-Order Sources
    Homayouni, S. M.
    Schreurs, D.
    Nauwelaers, B.
    Crupi, G.
    2008 WORKSHOP ON INTEGRATED NONLINEAR MICROWAVE AND MILLIMETRE- WAVE CIRCUITS (INMMIC), 2008, : 9 - +
  • [40] Non-Quasi-Static Large-Signal Model for RF LDMOS Power Transistors
    Zhang, Lei
    Rueda, Hernan
    Kim, Kevin
    Aaen, Peter
    2018 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM - IMS, 2018, : 548 - 550