Characterization of ultrafast devices using near-field optical heterodyning

被引：3
|
作者：
Ali, ME [1 ]
Geary, K
Fetterman, HR
Han, SK
Kang, KY
机构：
[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
[2] Elect & Telecommun Res Inst, Telecommun Basic Res Lab, Taejon 305606, South Korea
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2002年 / 12卷 / 10期
关键词：
high electron mobility transistors; millimeter-wave generation; near-field optics; optical fiber probes; optical heterodyning; photoconductive switches; photodetectors; phototransistors; ultrafast photoresponse;
D O I：
10.1109/LMWC.2002.804553
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We demonstrate a novel technique for highly localized injection of millimeter waves in ultrafast devices that combines optical heterodyning and near-field optics. The technique relies on evanescent coupling of two interfering lasers to a submicron area of a device by means of a near-field fiber optic probe. Scanning measurements show the dc and ac photoresponses of two ultrafast device structures, namely low-temperature GaAs photoconductive switches and InP-based high electron mobility transistors. The response characteristics were rich in structures that revealed important details of device dynamics.
引用
收藏
页码：369 / 371
页数：3
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