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Ferromagnetic resonance and magnetic damping in C-doped Mn5Ge3
被引:16
|作者:
Dutoit, C-E
[1
]
Dolocan, V. O.
[1
]
Kuzmin, M.
[1
]
Michez, L.
[2
]
Petit, M.
[2
]
Le Thanh, V.
[2
]
Pigeau, B.
[3
]
Bertaina, S.
[1
]
机构:
[1] Aix Marseille Univ, CNRS, IM2NP, UMR7334, F-13397 Marseille 20, France
[2] Aix Marseille Univ, CNRS, CINaM UMR7325, F-13288 Marseille, France
[3] Univ Grenoble Alpes, CNRS, Inst Neel, F-38042 Grenoble, France
关键词:
ferromagnetic resonance;
magnetic anisotropy;
magnetic damping;
thin films;
EPITAXIAL-GROWTH;
FILMS;
TEMPERATURE;
D O I:
10.1088/0022-3727/49/4/045001
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Ferromagnetic resonance (FMR) was used to investigate the static and dynamic magnetic properties of carbon-doped Mn5Ge3 (C-0.1 and C-0.2) thin films grown on Ge(1 1 1). The temperature dependence of magnetic anisotropy shows an increased perpendicular magneto-crystalline contribution at 80 K with an in-plane easy axis due to the large shape contribution. We find that our samples show a small FMR linewidth (corresponding to an intrinsic magnetic damping parameter alpha = 0.005) which is a measure of the spin relaxation and directly related with the magnetic and structural quality of the material. In the perpendicular-to-plane geometry, the FMR linewidth shows a minimum at around 200 K for all the samples, which seems to be not correlated to the C-doping. The magnetic relaxation parameters have been determined and indicate the two-magnon scattering as the main extrinsic contribution. We observe a change in the main contribution from scattering centres in Mn-5 Ge3C0.2 at low temperatures, which could be related to the minimum in linewidth.
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页数:9
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