Delayed Onset of Nonthermal Melting in Single-Crystal Silicon Pumped with Hard X Rays

被引:20
|
作者
Pardini, T. [1 ]
Alameda, J. [1 ]
Aquila, A. [2 ]
Boutet, S. [2 ]
Decker, T. [1 ]
Gleason, A. E. [2 ,3 ]
Guillet, S. [2 ]
Hamilton, P. [1 ]
Hayes, M. [2 ]
Hill, R. [1 ]
Koglin, R. J. [2 ]
Kozioziemski, B. [1 ]
Robinson, J. [1 ]
Sokolowski-Tinten, K. [4 ,5 ]
Soufli, R. [1 ]
Hau-Riege, S. P. [1 ]
机构
[1] Lawrence Livermore Natl Lab, 7000 East Ave, Livermore, CA 94550 USA
[2] SLAC Natl Accelerator Lab, Menlo Pk, CA 94025 USA
[3] Los Alamos Natl Lab, Shock & Detonat Phys, POB 1663, Los Alamos, NM 87545 USA
[4] Univ Duisburg Essen, Fac Phys, Lotharstr 1, D-47048 Duisburg, Germany
[5] Univ Duisburg Essen, Ctr Nanointegrat Duisburg Essen CENIDE, Lotharstr 1, D-47048 Duisburg, Germany
关键词
FEMTOSECOND; TRANSITIONS; DYNAMICS;
D O I
10.1103/PhysRevLett.120.265701
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In this work, we monitor the onset of nonthermal melting in single-crystal silicon by implementing an x-ray pump-x-ray probe scheme. Using the ultrashort pulses provided by the Linac Coherent Light Source (SLAC) and a custom-built split-and-delay line for hard x rays, we achieve the temporal resolution needed to detect the onset of the transition. Our data show no loss of long-range order up to 150 +/- 40 fs from photoabsorption, which we interpret as the time needed for the electronic system to equilibrate at or above the critical nonthermal melting temperature. Once such equilibration is reached, the loss of long-range atomic order proceeds inertially and is completed within 315 +/- 40 fs from photoabsorption.
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页数:4
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