Annealing effect for SnS thin films prepared by high-vacuum evaporation

被引:22
|
作者
Revathi, Naidu [1 ]
Bereznev, Sergei [1 ]
Loorits, Mihkel [1 ]
Raudoja, Jaan [1 ]
Lehner, Julia [1 ]
Gurevits, Jelena [1 ]
Traksmaa, Rainer [1 ]
Mikli, Valdek [1 ]
Mellikov, Enn [1 ]
Volobujeva, Olga [1 ]
机构
[1] Tallinn Univ Technol, Dept Mat Sci, EE-19086 Tallinn, Estonia
来源
关键词
D O I
10.1116/1.4896334
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Thin films of SnS are deposited onto molybdenum-coated soda lime glass substrates using the high-vacuum evaporation technique at a substrate temperature of 300 degrees C. The as-deposited SnS layers are then annealed in three different media: (1) H2S, (2) argon, and (3) vacuum, for different periods and temperatures to study the changes in the microstructural properties of the layers and to prepare single-phase SnS photoabsorber films. It is found that annealing the layers in H2S at 400 degrees C changes the stoichiometry of the as-deposited SnS films and leads to the formation of a dominant SnS2 phase. Annealing in an argon atmosphere for 1 h, however, causes no deviations in the composition of the SnS films, though the surface morphology of the annealed SnS layers changes significantly as a result of a 2 h annealing process. The crystalline structure, surface morphology, and photosensitivity of the as-deposited SnS films improves significantly as the result of annealing in vacuum, and the vacuum-annealed films are found to exhibit promising properties for fabricating complete solar cells based on these single-phase SnS photoabsorber layers. (C) 2014 American Vacuum Society.
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页数:6
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