Chemical deposition of Al2O3 thin films on Si substrates

被引：73
|
作者：
Vitanov, P. [1 ]
Harizanova, A. [1 ]
Ivanova, T. [1 ]
Dimitrova, T. [2 ]
机构：
[1] Bulgarian Acad Sci, Cent Lab Solar Energy & New Energy Sources, Sofia, Bulgaria
[2] Four Dimens Inc, Hayward, CA USA
来源：
THIN SOLID FILMS | 2009年 / 517卷 / 23期
关键词：
Sol-gel; Dielectric properties; Al2O3; MIS structure; C-V measurements; ATOMIC LAYER DEPOSITION; ELECTRICAL-PROPERTIES; SILICON;
D O I：
10.1016/j.tsf.2009.02.085
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Uniform Al2O3 films were deposited on silicon substrates by the sol-gel process from stable coating solutions. The technological procedure includes spin coating deposition and investigating the influence of the annealing temperature on the dielectric properties. The layers were studied by Fourier transform infrared spectroscopy and Scanning Electron Spectroscopy. The electrical measurements have been carried out on metal-insulator-semiconductor (MIS) structures. The C-V curves show a negative fixed charge at the interface and density of the interface state, Dit, 3.7 x 10(11) eV(-1) cm(-2) for annealing temperature at 750 degrees C. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：6327 / 6330
页数：4
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