Domain-wall resistance in CoFeB-based heterostructures with interface Dzyaloshinskii-Moriya interaction

被引：1

作者：

Ishikuro, Yuto ^{[1
]}

Kawaguchi, Masashi ^{[1
]}

Lau, Yong-Chang ^{[1
,2
]}

Nakatani, Yoshinobu ^{[3
]}

Hayashi, Masamitsu ^{[1
,2
]}

机构：

[1] Univ Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan

[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

[3] Univ Electrocommun, Chofu, Tokyo 1828585, Japan

来源：

APPLIED PHYSICS EXPRESS | 2018年 / 11卷 / 07期

关键词：

CURRENT-DRIVEN DYNAMICS; FERROMAGNETS; MAGNETORESISTANCE; RESISTIVITY; SKYRMIONS; TORQUE;

D O I：

10.7567/APEX.11.073001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the domain-wall resistance in W/Ta/CoFeB/MgO heterostructures. The Ta layer thickness was varied to control the type of domain walls (DWs) via changes in the interfacial Dzyaloshinskii-Moriya interaction. The domain-wall resistance was nearly constant with changes in the Ta layer thickness. The anisotropic magnetoresistance, spin Hall magnetoresistance, and anomalous Hall effect contributed to the domain-wall resistance of the thick-Ta layer films. However, a discrepancy remains for the thin-Ta layer films, wherein chiral Neel-like DWs were observed. These results show the difficulty of studying the domain-wall type via resistance measurements. (C) 2018 The Japan Society of Applied Physics

引用

页数：5

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