Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers

被引：20
|
作者：
Kuo, C. H. [1 ]
Chen, C. M.
Kuo, C. W.
Tun, C. J.
Pan, C. J.
Pong, B. J.
Chi, G. C.
机构：
[1] Natl Cent Univ, Dept Opt & Photon, Chungli 320, Taiwan
[2] Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, Taiwan
[3] Natl Cent Univ, Dept Phys, Chungli 320, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 20期
关键词：
D O I：
10.1063/1.2387941
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors have demonstrated nitride-based near-ultraviolet (NUV) light emitting diodes (LEDs) with mesh indium tin oxide (ITO) contact layer. With 20 mA injection current, it was found that forward voltages were 3.94 and 4.05 V while the output powers were 7.54 and 9.02 mW for the planar ITO LED and mesh ITO LED, respectively. The larger LED output power should be attributed partially to the reduced absorption of ITO in the NUV region and partially to the better current spreading. (c) 2006 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 50 条
  • [11] Indium-zinc oxide transparent electrode for nitride-based light-emitting diodes
    Mizutani, S.
    Nakashima, S.
    Iwaya, M.
    Takeuchi, T.
    Kamiyama, S.
    Akasaki, I.
    Kondo, T.
    Teramae, F.
    Suzuki, A.
    Kitano, T.
    Mori, M.
    Matsubara, M.
    LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XVII, 2013, 8641
  • [12] Hybridly Packaged White Light Emitting Diode Composed of Fluorescent SiC and Nitride-Based Near-Ultraviolet Light Emitting Diode
    Mizuno, Taisei
    Akiyoshi, Syota
    Iwaya, Motoaki
    Takeuchi, Tetsuya
    Kamiyama, Satoshi
    Ou, Yiyu
    Ou, Haiyan
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2024, 221 (21):
  • [13] Nitride-based cascade near white light-emitting diodes
    Chen, CH
    Chang, SJ
    Su, YK
    Sheu, JK
    Chen, JF
    Kuo, CH
    Lin, YC
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (07) : 908 - 910
  • [14] Near-ultraviolet organic light emitting diodes using melem
    Minamide, Hiroki
    Yamazaki, Taiki
    Kiuchi, Hiroki
    Moue, Rena
    Sonoda, Yoriko
    Kanai, Kaname
    CHEMICAL PHYSICS LETTERS, 2023, 815
  • [15] Ag-mesh-combined graphene for an indium-free current spreading layer in near-ultraviolet light-emitting diodes
    Min, Jung-Hong
    Jang, So-Yeong
    Kim, Ki-Young
    Choi, Sang-Bae
    Seong, Won-Seok
    Lee, Dong-Seon
    RSC ADVANCES, 2015, 5 (92) : 75325 - 75332
  • [16] Recent Progress of Ultraviolet and Near-ultraviolet Organic Light-emitting Diodes
    Wang H.
    Zhu Y.
    Xie F.
    Li Y.
    Tang J.
    Faguang Xuebao/Chinese Journal of Luminescence, 2023, 44 (01): : 140 - 162
  • [17] Nitride-based light emitting diodes with quaternary p-AlInGaN surface layers
    Kuo, C. H.
    Chang, S. J.
    Chi, G. C.
    Lam, K. T.
    Sun, Y. S.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06): : 2153 - 2155
  • [18] Nitride-based light-emitting diodes with InGaN/GaN SAQD active layers
    Ji, LW
    Su, YK
    Chang, SJ
    Hung, SC
    Chang, CS
    Wu, LW
    IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 2004, 151 (05): : 486 - 488
  • [19] Nitride-based light-emitting diodes with p-AlInGaN surface layers
    Kuo, CH
    Lin, CC
    Chang, SJ
    Hsu, YP
    Tsai, JM
    Lai, WC
    Wang, PT
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (10) : 2346 - 2349
  • [20] Impact of carbon nanotube pattern layers on gallium nitride-based light emitting diodes
    Tian, M. F.
    Feng, X. J.
    Long, H.
    Ying, L. Y.
    Zhang, B. P.
    Wang, K.
    Yu, T. J.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020, 35 (11)
12345