Chemical struture of films grown by AlN laser ablation: an X-ray photoelectron spectroscopy study

We report on a study of the compositional and chemical properties of films deposited on silicon by excimer laser beam (Lambda Physik Compex 205, KrF, 248 nm wavelength, 25 ns pulse duration) of a ceramic AIN target. The ablation has been performed either in vacuum or in the presence of a gas atmosphere. The effect of oxygen incorporation in the films on their chemical structure was investigated. The binding energy of the Al 2p, N 1s and O 1s core electrons indicates the formation of near-stoichiometric aluminum nitride in films grown in a vacuum (10(-7) - 10(-5) mbar), whereas in films grown under an oxygen partial pressure of 0.1 mbar only aluminum oxide formation was observed.