Chemical struture of films grown by AlN laser ablation: an X-ray photoelectron spectroscopy study

被引：0
|
作者：
Stanca, I [1 ]
机构：
[1] Univ Oradea, Dept Phys, Oradea 410087, Romania
[2] Trinity Coll Dublin, Dept Phys, Dublin 2, Ireland
来源：
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2006年 / 8卷 / 03期
关键词：
AlN films; pulsed laser deposition; X-ray photoelectron spectroscopy;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on a study of the compositional and chemical properties of films deposited on silicon by excimer laser beam (Lambda Physik Compex 205, KrF, 248 nm wavelength, 25 ns pulse duration) of a ceramic AIN target. The ablation has been performed either in vacuum or in the presence of a gas atmosphere. The effect of oxygen incorporation in the films on their chemical structure was investigated. The binding energy of the Al 2p, N 1s and O 1s core electrons indicates the formation of near-stoichiometric aluminum nitride in films grown in a vacuum (10(-7) - 10(-5) mbar), whereas in films grown under an oxygen partial pressure of 0.1 mbar only aluminum oxide formation was observed.
引用
收藏
页码：1148 / 1151
页数：4
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