In situ and real-time ellipsometry monitoring of submicron titanium nitride/titanium silicide electronic devices

被引：13

作者：

Patsalas, P ^{[1
]}

Charitidis, C ^{[1
]}

Logothetidis, S ^{[1
]}

机构：

[1] Aristotelian Univ Salonika, Dept Phys, GR-54006 Salonika, Greece

来源：

APPLIED SURFACE SCIENCE | 2000年 / 154卷

关键词：

titanium nitride; titanium silicide; optical properties; spectroscopic ellipsometry; microstructure;

D O I：

10.1016/S0169-4332(99)00444-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We fabricated Al/TiNx/(Ti/Si) x 15/Si(100) submicron devices by magnetron sputtering. Spectroscopic Ellipsometry (SE) was used for in situ characterization of TIN,, Ti and Si layers. The intermixing of Ti/Si layers and the phase transformations of TiSi during annealing were monitored by Kinetic Ellipsometry (KE). The metallic behavior of the TiNx layers was studied by analyzing their dielectric function in the IR region, measured by Fourier Transform InfraRed Spectroscopic Ellipsometry (FTIRSE), and by the unscreened plasma energy ((h) over bar omega(pu)) calculated by SE data analysis. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：256 / 262

页数：7

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