Investigation of fast and slow traps in atomic layer deposited AlN on 4H-SiC

被引：5

作者：

Kim, Hogyoung ^{[1
]}

Yun, Hee Ju ^{[2
]}

Choi, Byung Joon ^{[2
]}

机构：

[1] Seoul Natl Univ Sci & Technol Seoultech, Dept Visual Opt, Seoul 01811, South Korea

[2] Seoul Natl Univ Sci & Technol Seoultech, Dept Mat Sci & Engn, Seoul 01811, South Korea

来源：

OPTIK | 2019年 / 184卷

基金：

新加坡国家研究基金会;

关键词：

AIN/4H-SiC; Conductance-voltage; Fast and slow raps; Strain relaxation; RAY PHOTOELECTRON-SPECTROSCOPY; WIDE-BANDGAP SEMICONDUCTOR; XPS ANALYSIS; STRUCTURAL-PROPERTIES; FILMS; TEMPERATURE; GROWTH; PASSIVATION; INTERFACE;

D O I：

10.1016/j.ijleo.2019.05.002

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We investigated the electrical and interfacial properties of AlN/4H-SiC interfaces prepared by atomic layer deposition (ALD). The conductance-voltage (G/omega-V) characteristics were identified based on two types of traps: fast and slow. Fast traps located in the semiconductor energy gap close to the AlN/SiC interface showed both narrow and wide energy distributions. Slow traps with defects in the AlN layer exhibited a narrow energy distribution. According to X-ray photoelectron spectroscopy analysis, the formation of AlN during the initial ALD deposition was unclear and some of the oxygen atoms present on the SiC surface were converted into Al2O3. Both O is and Al 2p core level spectra shifted to lower energies as the AlN thickness increased. This was associated with the strain relaxation originating from the lattice mismatch between AlN and SiC.

引用

页码：527 / 532

页数：6

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