Kinetics of tertiarybutylphosphine adsorption and phosphorus desorption from indium phosphide (001)

被引:13
|
作者
Sun, Y [1 ]
Law, DC [1 ]
Visbeck, SB [1 ]
Hicks, RF [1 ]
机构
[1] Univ Calif Los Angeles, Dept Chem Engn, Los Angeles, CA 90095 USA
基金
美国国家科学基金会;
关键词
indium phosphide; surface chemical reaction;
D O I
10.1016/S0039-6028(02)01819-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The kinetics of tertiarybutylphosphine adsorption and phosphorus desorption from indium phosphide (0 0 1) have been determined using reflectance difference spectroscopy for real-time monitoring of the phosphorus coverage. The precursor adsorption rate depends linearly on the coverage, and the initial sticking coefficient varies from 0.007 to 0.001 as the temperature increases from 420 to 520 degreesC. The phosphorus desorption rate is first order in the coverage and exhibits an activation energy and pre-exponential factor of 2.4 +/- 0.2 eV and 10(14.7 + 1.5) s(-1). These reaction kinetics play an important role in the growth of phosphide-based alloys by metalorganic vapor-phase epitaxy. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:256 / 262
页数:7
相关论文
共 50 条
  • [41] KINETICS OF BATCH ADSORPTION AND DESORPTION
    DRYDEN, CE
    KAY, WB
    INDUSTRIAL AND ENGINEERING CHEMISTRY, 1954, 46 (11): : 2294 - 2300
  • [42] KINETICS OF MULTILAYER ADSORPTION AND DESORPTION
    KARASOVA, I
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1989, 39 (12) : 1378 - 1391
  • [43] Adsorption and decomposition of triethylphosphine (TEP) and tertiarybutylphosphine (TBP) on GaP(001) studied by HREELS and TPD
    Kaneda, G.
    Takeuchi, T.
    Murata, J.
    Sanada, N.
    Fukuda, Y.
    Applied Surface Science, 1997, 121-122 : 245 - 248
  • [44] DEEP LEVELS IN INDIUM-PHOSPHIDE IMPLANTED WITH ARGON AND PHOSPHORUS
    KIMURA, T
    KUWATA, M
    LUO, JK
    YUGO, S
    ADACHI, Y
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 37-8 : 321 - 324
  • [45] EQUILIBRIUM VAPOR PRESSURE OF PHOSPHORUS AT THE MELTING POINT OF INDIUM PHOSPHIDE
    NASHELSKII, AY
    OSTROVSKAYA, VZ
    YAKOBSON, SV
    ZHURNAL FIZICHESKOI KHIMII, 1964, 38 (04): : 891 - 895
  • [46] GROWTH OF UNDOPED INDIUM-PHOSPHIDE BY OMVPE IN AN INVERTED-VERTICAL REACTOR USING TRIMETHYLINDIUM AND TERTIARYBUTYLPHOSPHINE AND PHOSPHINE
    PARSONS, JD
    OATIS, K
    WU, J
    CHADDHA, AK
    HAHN, SR
    CHEN, HS
    WILD, S
    DENG, C
    PLANT, T
    MARLIA, J
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (11) : 3280 - 3283
  • [47] AN INDIUM-PHOSPHORUS HETEROCUBANE AS A NEW-TYPE OF INDIUM-PHOSPHIDE PRECURSOR
    ATWOOD, DA
    COWLEY, AH
    JONES, RA
    MARDONES, MA
    JOURNAL OF ORGANOMETALLIC CHEMISTRY, 1993, 449 (1-2) : C1 - C2
  • [48] Adsorption and desorption kinetics for nonlinear adsorption isotherms
    Filippova, NL
    CHEMICAL ENGINEERING COMMUNICATIONS, 2000, 178 : 129 - 142
  • [49] PREPARATION OF INDIUM PHOSPHIDE MONOCRYSTALS FROM AN INDIUM SOLUTION
    RODER, O
    PILKUHN, M
    CHEMIE INGENIEUR TECHNIK, 1968, 40 (23) : 1182 - &
  • [50] KINETICS OF ADSORPTION FROM A SOLUTION . ROLE OF DIFFUSION AND OF ADSORPTION-DESORPTION ANTAGONISM
    BARET, JF
    JOURNAL OF PHYSICAL CHEMISTRY, 1968, 72 (08): : 2755 - &