Depth-resolved cathodoluminescence characterization of buried InGaP/GaAs heterointerfaces

被引：9
|
作者：
Ishikawa, F
Hasegawa, H
机构：
[1] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan
[2] Hokkaido Univ, Grad Sch Elect & Informat Engn, Sapporo, Hokkaido 0608628, Japan
来源：
APPLIED SURFACE SCIENCE | 2002年 / 190卷 / 1-4期
关键词：
cathodoluminescence; heterointerface; depth-resolved; non-destructive; InGaP;
D O I：
10.1016/S0169-4332(01)00927-8
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
As a new approach for contactless and non-destructive characterization method of buried multi-layer heterointerfaces, acceleration voltage-dependence of cathodoluminescence (CL) spectra is investigated for various InGaP/GaAs multi-layer heterostructures. The plot of CL intensity vs. acceleration voltage for a multi-layer heterostructure is defined as the cathodoluminescence in-depth spectrum (CLIS). Experimental CLIS spectra on InGaP/GaAs single heterostructures and quantum well structures grown on GaAs by MOVPE and by GSMBE using TBP as the P source demonstrate that CLIS technique is very powerful to obtain depth-resolved information on multi-layer heterostructures. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：508 / 512
页数：5
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