A design of CMOS voltage doubler for 1V operation

被引：0
|
作者：
Wang, Q [1 ]
Shao, BX [1 ]
机构：
[1] SyncMOS Semicond Ltd Co, Shanghai 200233, Peoples R China
来源：
2001 4TH INTERNATIONAL CONFERENCE ON ASIC PROCEEDINGS | 2001年
关键词：
D O I：
10.1109/ICASIC.2001.982546
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
Design of a new charge pump cell used to make a voltage doubler working under IV supply voltage is presented. A new idea of using a minimum-sized transistor to startup the charge pump, in stead of the existing cross-coupled method, makes the charge pump cell more suitable for on-chip application because of its high performance with simpler design and smaller area. A fully integrated charge pump based on the cell is also presented.
引用
收藏
页码：255 / 258
页数：4
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