FROM BTI VARIABILITY TO PRODUCT FAILURE RATE: A TECHNOLOGY SCALING PERSPECTIVE

被引：0
|
作者：
Huard, V. [1 ]
Angot, D. [1 ]
Cacho, F. [1 ]
机构：
[1] STMicroelectronics, 850 Rue Jean Monnet, F-38926 Crolles, France
来源：
2015 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2015年
关键词：
reliability; variability; BTI; ITRS; microprocessor; guardband; product qualification; gate-level models; aged models; DVFS; AVS; failure rate; multicore;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work provides elements to highlight the reliability challenges related to the technology scaling and the BTI variability. Through main milestones including device reliability scaling model (for both mean and spread), a discussion on the physical origin of BTI variability and a digital IP failure rate analytical model, the evolution of digital IP failure rates along the ITRS scaling roadmap is assessed. and an analysis of the ITRS roadmap on digital IP failure rates. This study offers new perspectives towards product hardening and qualification with respect to both fresh and BTI-related local variability, especially in context where Adaptive Voltage Scaling (AVS) is used to compensate for process centerings.
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页数：6
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