Technology Variability From a Design Perspective

被引:16
|
作者
Nikolic, Borivoje [1 ]
Park, Ji-Hoon [1 ]
Kwak, Jaehwa [1 ]
Giraud, Bastien [2 ]
Guo, Zheng [3 ]
Pang, Liang-Teck [4 ]
Toh, Seng Oon [1 ]
Jevtic, Ruzica [1 ]
Qian, Kun [1 ]
Spanos, Costas [1 ]
机构
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
[2] CEA Leti, F-38000 Grenoble, France
[3] Intel Corp, Hillsboro, OR 97124 USA
[4] IBM TJ Watson Ctr, Yorktown Hts, NY 10598 USA
关键词
CMOS; digital logic; SRAM; static timing analysis; variability; DIE-TO-DIE; RING OSCILLATORS; PERFORMANCE; FREQUENCY; IMPACT; FLUCTUATIONS; CIRCUIT;
D O I
10.1109/TCSI.2011.2165389
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Increased variability in semiconductor process technology and devices requires added margins in the design to guarantee the desired yield. Variability is characterized with respect to the distribution of its components, its spatial and temporal characteristics and its impact on specific circuit topologies. Approaches to variability characterization and modeling for digital logic and SRAM are analyzed in this paper. Transistor arrays and ring oscillator arrays are designed to isolate specific systematic and random variability components in the design. Distributions of SRAM design margins are measured by using padded-out cells and observing minimum array operating voltages. Correlations between various components of variability are essential for adding appropriate margins to the design.
引用
收藏
页码:1996 / 2009
页数:14
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