Inverted p-down Design for High-Speed Photodetectors

被引：12

作者：

Nada, Masahiro ^{[1
]}

Nakajima, Fumito ^{[2
]}

Yoshimatsu, Toshihide ^{[1
]}

Nakanishi, Yasuhiko ^{[1
]}

Kanda, Atsushi ^{[1
]}

Shindo, Takahiko ^{[1
]}

Tatsumi, Shoko ^{[1
]}

Matsuzaki, Hideaki ^{[2
]}

Sano, Kimikazu ^{[1
]}

机构：

[1] NTT Corp, NTT Device Innovat Ctr, Atsugi, Kanagawa 2430198, Japan

[2] NTT Corp, NTT Device Technol Labs, Atsugi, Kanagawa 2430198, Japan

来源：

PHOTONICS | 2021年 / 8卷 / 02期

关键词：

avalanche photodiode; photodiode; vertical illumination structure;

D O I：

10.3390/photonics8020039

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We discuss the structural consideration of high-speed photodetectors used for optical communications, focusing on vertical illumination photodetectors suitable for device fabrication and optical coupling. We fabricate an avalanche photodiode that can handle 100-Gbit/s four-level pulse-amplitude modulation (50 Gbaud) signals, and pin photodiodes for 100-Gbaud operation; both are fabricated with our unique inverted p-side down (p-down) design.

引用

页码：1 / 9

页数：9

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