Inverted p-down Design for High-Speed Photodetectors

被引:12
|
作者
Nada, Masahiro [1 ]
Nakajima, Fumito [2 ]
Yoshimatsu, Toshihide [1 ]
Nakanishi, Yasuhiko [1 ]
Kanda, Atsushi [1 ]
Shindo, Takahiko [1 ]
Tatsumi, Shoko [1 ]
Matsuzaki, Hideaki [2 ]
Sano, Kimikazu [1 ]
机构
[1] NTT Corp, NTT Device Innovat Ctr, Atsugi, Kanagawa 2430198, Japan
[2] NTT Corp, NTT Device Technol Labs, Atsugi, Kanagawa 2430198, Japan
关键词
avalanche photodiode; photodiode; vertical illumination structure;
D O I
10.3390/photonics8020039
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We discuss the structural consideration of high-speed photodetectors used for optical communications, focusing on vertical illumination photodetectors suitable for device fabrication and optical coupling. We fabricate an avalanche photodiode that can handle 100-Gbit/s four-level pulse-amplitude modulation (50 Gbaud) signals, and pin photodiodes for 100-Gbaud operation; both are fabricated with our unique inverted p-side down (p-down) design.
引用
收藏
页码:1 / 9
页数:9
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