Wet etching and chemical polishing of InAs/GaSb superlattice photodiodes

被引：81

作者：

Chaghi, R. ^{[1
]}

Cervera, C. ^{[1
]}

Ait-Kaci, H. ^{[1
]}

Grech, P. ^{[1
]}

Rodriguez, J. B. ^{[1
]}

Christol, P. ^{[1
]}

机构：

[1] Univ Montpellier 2, CNRS, IES, UMR 5214, F-34095 Montpellier 05, France

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2009年 / 24卷 / 06期

关键词：

SULFUR-PASSIVATION; SULFIDE PASSIVATION; SURFACE PASSIVATION; GASB; INAS; SEMICONDUCTORS; INGAASSB; GROWTH;

D O I：

10.1088/0268-1242/24/6/065010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we studied wet chemical etching fabrication of the InAs/GaSb superlattice mesa photodiode for the mid-infrared region. The details of the wet chemical etchants used for the device process are presented. The etching solution is based on orthophosphoric acid (H3PO4), citric acid (C6H8O7) and H2O2, followed by chemical polishing with the sodium hypochlorite (NaClO) solution and protection with photoresist polymerized. The photodiode performance is evaluated by current-voltage measurements. The zero-bias resistance area product R(0)A above 4 x 10(5) Omega cm(2) at 77 K is reported. The device did not show dark current degradation at 77 K after exposition during 3 weeks to the ambient air.

引用

页数：6

共 50 条

[31] Strain-balanced InAs/GaSb type-II superlattice structures and photodiodes grown on InAs substrates by metalorganic chemical vapor deposition
Huang, Yong
Ryou, Jae-Hyun
Dupuis, Russell D.
Zuo, Daniel
Kesler, Benjamin
Chuang, Shun-Lien
Hu, Hefei
Kim, Kyou-Hyun
Lu, Yen Ting
Hsieh, K. C.
Zuo, Jian-Min
APPLIED PHYSICS LETTERS, 2011, 99 (01)
[32] Quantum Efficiency Analysis of InAs-GaSb Type-II Superlattice Photodiodes
Mou, Shin
Li, Jian V.
Chuang, Shun Lien
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2009, 45 (5-6) : 737 - 743
[33] Mid-Infrared InAs/GaSb Superlattice Planar Photodiodes Fabricated by Metal-Organic Chemical Vapor Deposition*
Zhao, Yu
Teng, Yan
Miao, Jing-Jun
Wu, Qi-Hua
Gao, Jing-Jing
Li, Xin
Hao, Xiu-Jun
Zhao, Ying-Chun
Dong, Xu
Xiong, Min
Huang, Yong
CHINESE PHYSICS LETTERS, 2020, 37 (06)
[34] Influence of Be doping placement in InAs/GaSb superlattice-based absorber on the performance of MWIR photodiodes
Czuba, K.
Sankowska, I.
Jurenczyk, J.
Jasik, A.
Papis-Polakowska, E.
Kaniewski, J.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2017, 32 (05)
[35] Influence of the p-type doping on the radiometric performances of MWIR InAs/GaSb superlattice photodiodes
Giard, E.
Ribet-Mohamed, I.
Delmas, M.
Rodriguez, J. B.
Christol, P.
INFRARED PHYSICS & TECHNOLOGY, 2015, 70 : 103 - 106
[36] Uncooled operation of type-II InAs/GaSb superlattice photodiodes in the midwavelength infrared range
Wei, YJ
Hood, A
Yau, HP
Gin, A
Razeghi, M
Tidrow, MZ
Nathan, V
APPLIED PHYSICS LETTERS, 2005, 86 (23) : 1 - 3
[37] Processes limiting the performance of InAs/GaSb superlattice mid-infrared PIN mesa photodiodes
Prineas, J. P.
Maiorov, Mikhail
Cao, C.
Olesberg, J. T.
Flatte, M. E.
Reddy, M.
Coretsopoulos, C.
Itzler, Mark
SEMICONDUCTOR PHOTODETECTORS III, 2006, 6119
[38] High-performance InAs/GaSb superlattice photodiodes for the very long wavelength infrared range
Mohseni, H
Razeghi, M
Brown, GJ
Park, YS
APPLIED PHYSICS LETTERS, 2001, 78 (15) : 2107 - 2109
[39] Optimization of Long-Wavelength InAs/GaSb Superlattice Photodiodes With Al-Free Barriers
Zhao, Yu
Teng, Yan
Hao, Xiujun
Wu, Qihua
Miao, Jingjun
Li, Xin
Xiong, Min
Huang, Yong
IEEE PHOTONICS TECHNOLOGY LETTERS, 2020, 32 (01) : 19 - 22
[40] Demonstration of midinfrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate
Nguyen, Binh-Minh
Hoffman, Darin
Huang, Edward Kwei-wei
Bogdanov, Simeon
Delaunay, Pierre-Yves
Razeghi, Manijeh
Tidrow, Meimei Z.
APPLIED PHYSICS LETTERS, 2009, 94 (22)

← 1 2 3 4 5 →