Modeling of Apparent Activation Energy and Lifetime Estimation for Retention of 3D SGVC Memory

被引：0

作者：

Hsiao, Wei-Hao ^{[1
]}

Wang, Nian-Jia ^{[1
]}

Lee, Ming-Yi ^{[1
]}

Kuo, Li-Kuang ^{[1
]}

Lin, Ding-Jhang ^{[1
]}

Chao, Yen-Hai ^{[1
]}

Lu, Chih-Yuan ^{[1
]}

机构：

[1] Macronix Int Co Ltd, 16 Li Hsin Rd,Sci Pk, Hsinchu 300, Taiwan

来源：

2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2019年

关键词：

3D BE-SONOS; Retention; Activation energy; Lifetime estimation; SONOS;

D O I：

10.1109/irps.2019.8720463

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The retention of 3D NAND with single-gate vertical channel (SGVC) architecture is investigated in various temperatures. The dominated mechanisms include electron and hole discharging in the nitride storage layer and cap layer of blocking oxide respectively. The retention behavior of both electron and hole are well modeled by a simple and analytical stretched exponential form with different activation energy. Although the formula doesn't follow Arrhenius law with constant activation energy, the apparent activation energy, defined for a specific lifetime condition, is useful to calculate acceleration factor and define qualification conditions for retention.

引用

页数：5

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