Progress on optimization of p-type GaAs/AlGaAs quantum well infrared photodetectors

被引：18
|
作者：
Shen, A [1 ]
Liu, HC
Buchanan, M
Gao, M
Szmulowicz, F
Brown, GJ
Ehret, J
机构：
[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
[2] USAF, Res Lab, Mat Directorate, Wright Patterson AFB, OH 45433 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 2000年 / 18卷 / 02期
关键词：
D O I：
10.1116/1.582234
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report the optimization of barrier thickness and well doping density for GaAs/AlGaAs p-type quantum well infrared photodetectors covering the 3-5 mu m wavelength region. We investigated a series of samples with barrier widths varying from 10 to 50 nm and found that the optimum barrier thickness is about 20 nm. For devices operating at about 100 K, the optimum two-dimensional doping density is found to be in the range 1-2x10(12)cm(-2), which maximizes the background limited infrared performance temperature and dark current limited detectivity. (C) 2000 American Vacuum Society. [S0734-2101(00)02802-5].
引用
收藏
页码：601 / 604
页数：4
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